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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features * High Collector-Emitter Breakdown Voltage * Low Collector-Emitter Saturation Voltage * The H2N6520 is complementary to H2N6517 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ....................................................................................................... -55 ~ +150 C Junction Temperature ............................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C)............................................................................................ 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage.................................................................................................. -350 V VCEO Collector to Emitter Voltage............................................................................................... -350 V VEBO Emitter to Base Voltage......................................................................................................... -5 V IC Collector Current ................................................................................................................. -500 mA IB Base Current ....................................................................................................................... -250 mA Characteristics (Ta=25C, *Pulse Test : Pulse Width 380us, Duty Cycle2% ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 VBE(on) *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. -350 -350 -5 20 30 30 20 15 40 Typ. Max. -50 -50 -0.30 -0.35 -0.50 -1 2 -0.75 -0.85 -0.90 200 200 200 6 Unit V V V nA nA V V V V V V V V Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-250V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-50mA, IB=-5mA IC=-100mA, VCE=-10V IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA IC=-10mA, VCE=-20V, f=20MHz VCB=-20V, f=1MHz, IE=0 HSMC Product Specification MHz pF HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 VCE=10V 10000 100000 Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB 100 VCE(sat) @ IC=10IB hFE 10 10 1 0.01 0.1 1 10 100 1000 1 0.001 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector CurrentT 10000 Cutoff Frequency & Collector Current 100 1000 VBE(ON) @ VCE=10V 100 0.01 Cutoff Frequency On Voltage (mV) VCE=20V 10 0.1 1 10 100 1000 1 10 100 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 700 600 PD-Ta Power Dissipation-PD(mW) 500 400 300 200 100 0 Capacitance (pF) 10 Cob 1 0.1 1 10 100 0 20 40 60 80 100 o 120 140 160 Reverse-Biased Voltage (V) Ambient Temperature-Ta( C) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 3/3 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Base 3.Collector 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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